2002. 11. 7 1/3 semiconductor technical data KTC3207T triple diffused npn transistor revision no : 1 high voltage switching application. color tv horizontal driver application. color tv chroma output application. features high voltage : v (br)ceo =300v small collector output capacitance : c ob =3.0pf(typ.) complementary to kta1073t. maximum ratings (ta=25 ) dim millimeters a b d e tsm 2.9 0.2 1.6+0.2/-0.1 0.70 0.05 0.4 0.1 2.8+0.2/-0.3 1.9 0.2 0.95 0.16 0.05 0.00-0.10 0.25+0.25/-0.15 c f g h i j k 0.60 l 0.55 a f g g d k b e c l h j j i 2 1 3 + _ + _ + _ + _ + _ 1. emitter 2. base 3. collector characteristic symbol rating unit collector-base voltage v cbo 300 v collector-emitter voltage v ceo 300 v emitter-base voltage v ebo 6 v collector current i c 100 ma base current i b 50 ma collector power dissipation p c * 0.9 w junction temperature t j 150 storage temperature range t stg -55 150 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =240v, i e =0 - - 1.0 a emitter cut-off current i ebo v eb =6v, i c =0 - - 1.0 a dc current gain h fe (1) v ce =10v, i c =1ma 30 - - h fe (2) (note) v ce =10v, i c =20ma 50 - 200 collector-emitter saturation voltage v ce(sat) i c =10ma, i b =1ma - - 1.0 v base-emitter saturation voltage v be(sat) i c =10ma, i b =1ma - - 1.0 v transition frequency f t v ce =10v, i c =20ma 50 - - mhz collector output capacitance c ob v cb =20v, i e =0, f=1mhz - 3.0 - pf h rank type name marking lot no. lx fe * package mounted on a ceramic board (600 0.8 ) note : h fe (2) classification o:50 150, y:100 200
2002. 11. 7 2/3 KTC3207T revision no : 1 0 collector current i (ma) c 0.2 base-emitter voltage v (v) be be c i - v 10 dc current gain h fe 500 100 3 1 0.3 collector current i (ma) c h - i v - i c collector current i (ma) 0.3 1 50 100 0.05 ce(sat) collector-emitter saturation i - v cce ce collector-emitter voltage v (v) 0 c collector current i (ma) 0 4 8 12 16 20 24 20 40 60 80 100 120 common emitter ta=25 c 6 4 3 2 1 0.6 0.4 i =0.2ma 0 b 0.4 0.6 0.8 1.0 1.2 20 40 60 80 100 common emitter v =10v ce ta=100 c ta=25 c ta=-25 c fe c 50 30 10 5 0.5 30 50 100 300 common emitter ta=25 c v =10v common emitter 300 100 50 30 0.5 5 10 30 50 c fe h - i c collector current i (ma) 0.3 1 3 100 500 fe dc current gain h 10 v =20v ce ce v =10v ce v =5v ta=100 c ta=25 c ta=-25 c ce(sat) c voltage v (v) common emitter ta=25 c 30 10 35 0.5 0.1 0.3 0.5 1 3 5 5 3 1 0.5 0.3 0.1 0.5 5 31030 i /i =5 common emitter voltage v (v) c ce(sat) collector-emitter saturation ce(sat) 0.05 100 50 1 0.3 collector current i (ma) c v - i i /i =10 c b b c i /i =2 b c i /i =5 c b ta=100 c ta=25 c ta=-25 c ce
2002. 11. 7 3/3 KTC3207T revision no : 1 v - i c collector current i (ma) 0.3 1 3 100 0.1 be(sat) base-emitter saturation be(sat) c voltage v (v) 53050 10 0.3 0.5 1 3 5 common emitter i /i =5 ta=25 c c b ta=25 c common emitter 500 300 100 50 30 10 50 30 5 c t transition frequency f (mhz) t 10 100 3 1 0.3 collector current i (ma) c f - i v =20 v ce ce v =10v ce v =5 v 10 collector output capacitance 1 ob 300 10 3 1 collector-base voltage v (v) cb c - v ob cb c (pf) 53050100 3 5 30 50 i =0 f=1mhz ta=25 c e c collector power dissipation p (w) ambient temperature ta ( c) 0 0 pc - ta 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 mounted on a ceramic board (600mm ` 0.8mm) 2
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